Li, Yang; Zhang, Cheng; Li, Zhuang; Gu, Peiyang; Wang, Zilong; Li, Hua; Lu, Jianmei; Zhang, Qichun published the artcile< Controlled deposition of large-area and highly-ordered thin films: effect of dip-coating-induced morphological evolution on resistive memory performance>, Reference of 20776-50-5, the main research area is resistive memory device dip coating morphol.
Developing a simple, versatile and efficient technique that enables both large-scale production and nano-scale control is highly desirable but very challenging for achieving high-performance organic-based memory electronic devices. Herein, the authors employed a dip-coating method to fabricate reliable and cost-effective organic memory devices (OMDs). This technique enables one to deposit high-quality, homogeneous and large-area nanopatterns on the surfaces of thin films and realize uniform OMD performances with a record reproducibility up to 96%. To the best of their knowledge, this is the first report on dip-coated OMDs with the highest reproducibility observed to date, which demonstrates the promising versatility of the dip-coating technique to fabricate organic memory devices and its suitability to scale-up for high-throughput solution processing.
Journal of Materials Chemistry C: Materials for Optical and Electronic Devices published new progress about Dip coating process. 20776-50-5 belongs to class bromides-buliding-blocks, and the molecular formula is C7H6BrNO2, Reference of 20776-50-5.
Referemce:
Bromide – Wikipedia,
bromide – Wiktionary